This paper reports about the extensive electrical characterization. with low distortion and greater reliability. of MOSFET devices at nanometric scales with ultra thin Fully Depleted (FD) type architecture on Silicon-On-Insulator (SOI) technology to reduce the short channel effects. The parameters of nMOS type devices of 10x1 μm 2 gate dimensions with conventional dielectric (SiON)... https://cosmeticssquadets.shop/product-category/theraphy-device-pads/